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Freescale Semiconductor Technical Data
Document Number: MRF8S9200N Rev. 0, 8/2009
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.9 19.9 19.5 hD (%) 37.7 37.1 36.8 Output PAR (dB) 6.1 6.1 6.0 ACPR (dBc) - 36.2 - 36.6 - 36.0
MRF8S9200NR3
920 - 960 MHz, 58 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFET
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 200 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness * Typical Pout @ 1 dB Compression Point ] 200 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * 225C Capable Plastic Package * Designed for Digital Predistortion Error Correction Systems * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ
CASE 2021 - 01, STYLE 1 OM - 780 - 2 PLASTIC
Value - 0.5, +70 - 6.0, +10 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 58 W CW Case Temperature 80C, 200 W CW Symbol RJC Value (2,3) 0.30 0.25 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2009. All rights reserved.
MRF8S9200NR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.3 Adc) VGS(th) VGS(Q) VDS(on) 1.5 2.3 0.1 2.3 3 0.2 3 3.8 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg., f = 940 MHz, Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 18 34 5.8 -- -- 19.9 37.1 6.1 - 36.6 - 22 21 -- -- - 35 -9 dB % dB dBc dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 920 MHz 940 MHz 960 MHz 1. Part internally matched both on input and output. Gps (dB) 19.9 19.9 19.5 hD (%) 37.7 37.1 36.8 Output PAR (dB) 6.1 6.1 6.0 ACPR (dBc) - 36.2 - 36.6 - 36.0 IRL (dB) - 14 - 22 - 15 (continued)
MRF8S9200NR3 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 160 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 58 W Avg. Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol P1dB IMDsym Min -- -- Typ 200 15 Max -- -- Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 920 - 960 MHz Bandwidth
VBWres GF G P1dB
-- -- -- --
45 0.7 0.012 0.001
-- -- -- --
MHz dB dB/C dBm/C
MRF8S9200NR3 RF Device Data Freescale Semiconductor 3
C29 R1 B1 VGS C4 C5 C31 C21 C22 C25 C26 VDS
C6 C7 C1
R2
C11 C10 C12 C15 C14 C13 C16 C17 C18 C20 C19
C2 C3
C8 C9
CUT OUT AREA
C32 C23 C24
C27 C28
C30 MRF8S9200N Rev 0
Figure 1. MRF8S9200NR3 Test Circuit Component Layout Table 6. MRF8S9200NR3 Test Circuit Component Designations and Values
Part B1 C1, C5, C19, C21, C22, C23, C24 C2 C3 C4 C6, C7, C8, C9 C10, C12 C11, C13 C14, C20 C15, C17 C16 C18 C25, C26, C27, C28 C29, C30 C31 C32 R1 R2 PCB Description Ferrite Beads, Short 39 pF Chip Capacitors 2 pF Chip Capacitor 6.2 pF Chip Capacitor 2.2 F Chip Capacitor 3.3 pF Chip Capacitors 6.8 pF Chip Capacitors 5.1 pF Chip Capacitors 0.8 pF Chip Capacitors 0.5 pF Chip Capacitors 1.5 pF Chip Capacitor 1.2 pF Chip Capacitor 10 F, 50 V Chip Capacitors 470 F, Electrolytic Capacitors 47 F, 50 V Electrolytic Capacitor 10 pF Chip Capacitor 3.3 , 1/2 W Chip Resistor 0 , 3.5 A Chip Resistor 0.030, r = 3.5 Part Number 2743019447 ATC100B390JT500XT ATC100B2R0BT500XT ATC100B6R2BT500XT C1825C225J5RAC - TU ATC100B3R3CT500XT ATC100B6R8CT500XT ATC100B5R1CT500XT ATC100B0R8BT500XT ATC100B0R5BT500XT ATC100B1R5BT500XT ATC100B1R2BT500XT GRM55DR61H106KA88L MCGPR63V477M13X26 - RH 476KXM050M ATC100B100JT500XT P3.3VCT - ND CRCW12060000Z0EA RF - 35 ATC ATC ATC Kemet ATC ATC ATC ATC ATC ATC ATC Murata Multicomp Illinois Cap. ATC Panasonic Vishay Taconic Manufacturer Fair - Rite
MRF8S9200NR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, Pout = 58 W (Avg.) IDQ = 1400 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth D, DRAIN EFFICIENCY (%) 21 20.5 20 Gps, POWER GAIN (dB) 19.5 19 18.5 18 17.5 17 16.5 16 800 PARC 825 850 875 900 925 950 975 ACPR IRL Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF D Gps 44 42 40 38 36 -30 -32 ACPR (dBc) -34 -36 -38 -40 1000 IRL, INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 0 -0.5 -1 -1.5 -2 -2.5 PARC (dB)
f, FREQUENCY (MHz)
Figure 2. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 58 Watts Avg.
-10 VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1400 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz IM3-U IM3-L -40 IM5-L IM7-L -50 IM7-U -60 1 10 TWO-TONE SPACING (MHz) 100 IM5-U
IMD, INTERMODULATION DISTORTION (dBc)
-20
-30
Figure 3. Intermodulation Distortion Products versus Two - Tone Spacing
20 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 19.5 Gps, POWER GAIN (dB) 19 18.5 18 17.5 17 1 0 -1 -2 -3 -4 -5 30 PARC -1 dB = 49.04 W Gps D ACPR 40 -3 dB = 95.95 W -2 dB = 69.69 W VDD = 28 Vdc, IDQ = 1400 mA, f = 940 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 50 70 90 110 35 30 25 130 Pout, OUTPUT POWER (WATTS) -20 -25 -30 -35 -40 -45 -50 ACPR (dBc)
55 D, DRAIN EFFICIENCY (%) 50 45
Figure 4. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
MRF8S9200NR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
24 23 22 Gps, POWER GAIN (dB) 21 20 19 18 17 16 15 14 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 ACPR D 100 VDD = 28 Vdc, IDQ = 1400 mA, Single-Carrier 960 MHz 90 W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% 940 MHz 920 MHz 80 Probability on CCDF 960 MHz 70 Gps f = 920 MHz 60 940 MHz 960 MHz 920 MHz 50 40 30 20 10 0 300 -20 -24 D, DRAIN EFFICIENCY (%) -28 -32 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 3.6 -36 -40 -44 -48 -52 -56 -60
Figure 5. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
25 20 15 GAIN (dB) 10 5 0 -5 -10 -15 550 650 VDD = 28 Vdc Pin = 0 dBm IDQ = 1400 mA 750 850 950 1050 1150 1250 IRL Gain 10 5 0 -5 -10 -15 -20 -25 -30 1350 IRL (dB) 3.84 MHz Channel BW
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 2 3 4 5 6 7 8 9 10 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW
PEAK-TO-AVERAGE (dB)
Figure 7. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal MRF8S9200NR3 6
Figure 8. Single - Carrier W - CDMA Spectrum RF Device Data Freescale Semiconductor
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zsource W 1.16 - j2.85 1.09 - j2.63 1.04 - j2.45 0.98 - j2.27 0.93 - j2.08 0.88 - j1.90 0.83 - j1.72 0.79 - j1.55 0.76 - j1.39 Zload W 2.29 - j2.08 2.11 - j1.95 1.94 - j1.81 1.76 - j1.68 1.59 - j1.51 1.42 - j1.33 1.28 - j1.13 1.14 - j0.93 1.02 - j0.73
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S9200NR3 RF Device Data Freescale Semiconductor 7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 59 58 Pout, OUTPUT POWER (dBm) 57 56 55 54 53 52 51 50 49 30 31 32 33 34 35 36 37 38 39 40 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 920 940 960 P1dB Watts 267 263 261 dBm 54.3 54.2 54.2 332 327 327 P3dB Watts dBm 55.2 55.1 55.2 f = 940 MHz Actual Ideal f = 920 MHz f = 960 MHz f = 920 MHz f = 960 MHz f = 940 MHz
Test Impedances per Compression Level f (MHz) 920 940 960 P1dB P1dB P1dB Zsource 0.70 - j1.66 0.68 - j1.85 0.87 - j1.99 Zload 0.82 - j1.52 0.73 - j1.60 0.76 - j1.70
Figure 10. Pulsed CW Output Power versus Input Power @ 28 V
MRF8S9200NR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8S9200NR3 RF Device Data Freescale Semiconductor 9
MRF8S9200NR3 10 RF Device Data Freescale Semiconductor
MRF8S9200NR3 RF Device Data Freescale Semiconductor 11
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Aug. 2009 * Initial Release of Data Sheet Description
MRF8S9200NR3 12 RF Device Data Freescale Semiconductor
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MRF8S9200NR3
Document Number: RF Device Data MRF8S9200N Rev. 0, 8/2009 Freescale Semiconductor
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